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CDM2205-800FP SL

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CDM2205-800FP SL

MOSFET N-CH 800V 5A TO220FP

Manufacturer: Central Semiconductor Corp

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Central Semiconductor Corp's CDM2205-800FP-SL is an N-Channel MOSFET designed for high-voltage applications. This component features a drain-to-source voltage (Vdss) of 800V and a continuous drain current (Id) of 5A at 25°C. The Rds(on) is specified at a maximum of 2.7 Ohms with a gate-source voltage (Vgs) of 10V and a drain current (Id) of 2.5A. Key parameters include a gate charge (Qg) of 17.4 nC at 10V and an input capacitance (Ciss) of 705 pF at 25V. The device operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 48W at 25°C. The CDM2205-800FP-SL is housed in a TO-220FP package, suitable for through-hole mounting. This MOSFET is utilized in industries requiring robust power management solutions.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C5A (Tc)
Rds On (Max) @ Id, Vgs2.7Ohm @ 2.5A, 10V
FET Feature-
Power Dissipation (Max)48W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-220FP
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)30V
Drain to Source Voltage (Vdss)800 V
Gate Charge (Qg) (Max) @ Vgs17.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds705 pF @ 25 V

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