CDM22012-800LRFP SL
MOSFET N-CH 800V 12A TO220FPManufacturer: Central Semiconductor Corp
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Central Semiconductor Corp's CDM22012-800LRFP-SL is an N-Channel MOSFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 800 V and a continuous drain current (Id) of 12 A at 25°C with a maximum power dissipation of 40 W (Tc). The Rds On is specified at a maximum of 450 mOhm at 6 A and 10 V. Key electrical characteristics include a gate charge (Qg) of 52.4 nC at 10 V and an input capacitance (Ciss) of 1090 pF at 100 V. The device operates within a temperature range of -55°C to 150°C (TJ). The CDM22012-800LRFP-SL is housed in a TO-220FP package, suitable for through-hole mounting. This MOSFET is utilized in power supply circuits, industrial motor control, and lighting applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220FP |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | 30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 52.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1090 pF @ 100 V |
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