CDM22010-650 SL
MOSFET N-CH 650V 10A TO220Manufacturer: Central Semiconductor Corp
Categories: Single FETs, MOSFETs
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Central Semiconductor Corp CDM22010-650-SL is a 650V N-Channel MOSFET designed for demanding power applications. This component features a continuous drain current of 10A (Ta) and a low on-resistance of 1Ohm at 5A, 10V. With a maximum gate charge of 20 nC at 10V and input capacitance of 1168 pF at 25V, it offers efficient switching characteristics. The device is housed in a standard TO-220-3 package, suitable for through-hole mounting. It supports a gate-source voltage range up to 30V and a threshold voltage of 4V at 250µA. Power dissipation is rated at 2W (Ta) and 156W (Tc). Operating temperature ranges from -55°C to 150°C (TJ). This component is utilized in industries such as industrial power supplies and motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 156W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | 30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1168 pF @ 25 V |
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