CDF56G6517N TR13 PBFREE
650V, 17A, N-CHANNEL GAN FET INManufacturer: Central Semiconductor Corp
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Central Semiconductor Corp CDF56G6517N-TR13-PBFREE is a 650V N-Channel Gallium Nitride (GaN) FET. This device offers a continuous drain current of 17A at 25°C (Tc) and a maximum power dissipation of 1.1W (Ta). The CDF56G6517N-TR13-PBFREE utilizes a surface mount, wettable flank 8-DFN (5x6) package, providing optimized thermal performance and ease of assembly for automated processes. This component is commonly employed in high-frequency power conversion applications across industries such as telecommunications, industrial power supplies, and consumer electronics where efficiency and compact design are critical. The PBFREE designation indicates compliance with lead-free manufacturing standards.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 25 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount, Wettable Flank |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| FET Feature | - |
| Power Dissipation (Max) | 1.1W (Ta) |
| Supplier Device Package | 8-DFN (5x6) |
| Grade | - |
| Drain to Source Voltage (Vdss) | 650 V |
| Qualification | - |
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