CCSPG1060N TR PBFREE
100V, 60A, N-CHANNEL CHIP SCALEManufacturer: Central Semiconductor Corp
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Central Semiconductor Corp CCSPG1060N-TR-PBFREE is an N-Channel GaNFET designed for demanding applications. This surface mount component offers a Drain to Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 60A at 25°C, with a maximum power dissipation of 300W (Tc). Key parameters include a low on-resistance (Rds On) of 5.5mOhm at 25A, 5V, and a gate charge (Qg) of 9.2 nC @ 5 V. Input capacitance (Ciss) is specified at 1000 pF @ 50 V. The device operates within a temperature range of -40°C to 150°C (TJ) and supports gate-source voltages (Vgs) up to +6V and down to -4V. This component is suitable for power management solutions in sectors such as automotive, industrial, and telecommunications. Supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 25 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 25A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 9mA |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | +6V, -4V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.2 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 50 V |
| Qualification | - |
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