CSICD10-650 TR13
DIODE SCHOTTKY 650V 10A DPAKManufacturer: Central Semiconductor Corp
Categories: Single Diodes
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Central Semiconductor Corp CSICD10-650-TR13 is a 650V, 10A Silicon Carbide (SiC) Schottky diode designed for surface mount applications. This component features a maximum forward voltage (Vf) of 1.7V at 10A and a reverse leakage current of 125 µA at 650V. The junction operating temperature range is from -55°C to 175°C. Packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63, this device is supplied on tape and reel. Its capacitance is rated at 28pF measured at 600V and 1MHz. This SiC Schottky diode is suitable for use in power factor correction, switch mode power supplies, and solar inverters.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 28pF @ 600V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | DPAK |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Current - Reverse Leakage @ Vr | 125 µA @ 650 V |
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