CSICD10-1200 TR13
DIODE SIL CARBIDE 1.2KV 10A DPAKManufacturer: Central Semiconductor Corp
Categories: Single Diodes
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Central Semiconductor Corp CSICD10-1200-TR13 is a 1200V, 10A Silicon Carbide (SiC) Schottky diode. This surface mount device, packaged in a DPAK (TO-252-3), offers a forward voltage (Vf) of 1.7V at 10A and a reverse leakage current of 250 µA at 1200V. It features a capacitance of 500pF at 1V, 1MHz, and boasts no significant reverse recovery time above 500mA. Operating across a junction temperature range of -55°C to 175°C, this component is suitable for power supply, motor control, and industrial power applications where high efficiency and reliability are critical. The part is supplied on tape and reel (TR).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 500pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | DPAK |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Current - Reverse Leakage @ Vr | 250 µA @ 1200 V |
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