CSICD05-1200 TR13
DIODE SIL CARBIDE 1.2KV 5A DPAKManufacturer: Central Semiconductor Corp
Categories: Single Diodes
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Central Semiconductor Corp CSICD05-1200-TR13 is a 1200 V, 5 A Silicon Carbide Schottky diode in a DPAK (TO-252-3, DPAK) surface mount package. This component offers a typical forward voltage of 1.7 V at 5 A and a reverse leakage current of 190 µA at 1200 V. The device exhibits no reverse recovery time above 500 mA, indicating high-speed switching performance. With a junction operating temperature range of -55°C to 175°C and a capacitance of 240 pF at 1V and 1MHz, it is suitable for demanding applications in power conversion, industrial automation, and renewable energy systems. Packaged in Tape & Reel (TR) for efficient automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 240pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 5A |
| Supplier Device Package | DPAK |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 5 A |
| Current - Reverse Leakage @ Vr | 190 µA @ 1200 V |
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