CSIC10-1200 SL
DIODE SIL CARB 1.2KV 10A TO220-2Manufacturer: Central Semiconductor Corp
Categories: Single Diodes
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Central Semiconductor Corp's CSIC10-1200-SL is a Silicon Carbide (SiC) Schottky diode designed for high-performance applications. This through-hole component features a 1200 V reverse voltage capability and a 10 A average rectified current rating. With a forward voltage drop of 1.8 V at 10 A and a low reverse leakage of 400 µA at 1200 V, it offers excellent efficiency. The device exhibits a high junction operating temperature range of -55°C to 175°C and a capacitance of 41pF at 600V. Its TO-220-2 package is suitable for power supply units, motor control, and industrial power applications. The CSIC10-1200-SL is characterized by its zero reverse recovery time for currents above 500mA.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 41pF @ 600V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A |
| Current - Reverse Leakage @ Vr | 400 µA @ 1200 V |
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