CSIC10-1200
DIODE SIL CARB 1.2KV 10A TO220-2Manufacturer: Central Semiconductor Corp
Categories: Single Diodes
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Central Semiconductor Corp CSIC10-1200 is a 1200V, 10A Silicon Carbide (SiC) Schottky diode in a TO-220-2 package. This through-hole component features a low forward voltage of 1.7V at 10A and a reverse leakage current of 250 µA at 1200V. Designed for demanding applications, it exhibits no discernible reverse recovery time for currents above 500mA, contributing to enhanced switching efficiency. The operating junction temperature range is from -55°C to 175°C. This device is suitable for power supply, motor drive, and renewable energy applications where high voltage and efficient switching are critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 500pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Current - Reverse Leakage @ Vr | 250 µA @ 1200 V |
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