CPD93V-1N4150-WN
DIODE GEN PURP 50V 200MA DIEManufacturer: Central Semiconductor Corp
Categories: Single Diodes
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Central Semiconductor Corp's 1N4150-WN is a general-purpose, small-signal diode designed for surface mount applications. This die-level component features a maximum reverse voltage of 50V and an average rectified forward current capability of 200mA. With a typical forward voltage drop of 1V at 200mA and a low reverse leakage of 100nA at 50V, it offers efficient rectification. The reverse recovery time is specified at 6ns, making it suitable for moderate frequency applications. The diode exhibits a junction capacitance of 2.5pF at 0V and 1MHz. Operating across a wide temperature range from -65°C to 150°C, the 1N4150-WN is commonly utilized in consumer electronics and industrial control systems. It is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 6 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 2.5pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 200mA |
| Supplier Device Package | Die |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 200 mA |
| Current - Reverse Leakage @ Vr | 100 nA @ 50 V |
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