1N5061 TR PBFREE
DIODE GEN PURP 600V 1A GPR-1AManufacturer: Central Semiconductor Corp
Categories: Single Diodes
Quality Control: Learn More
Central Semiconductor Corp 1N5061-TR-PBFREE is a general-purpose diode designed for high voltage applications. This axial leaded component, housed in an R-1 package (GPR-1A) and supplied on tape and reel, offers a maximum DC reverse voltage (Vr) of 600 V and an average rectified forward current (Io) of 1 A. It features a standard recovery time exceeding 500 ns for currents greater than 200 mA. The forward voltage drop (Vf) is a maximum of 1.2 V at 1 A, and reverse leakage current is rated at 5 µA at 600 V. With a junction operating temperature range of -65°C to 175°C, this diode finds application in power supply circuits, rectification, and general switching applications across various industrial and consumer electronics sectors. Its capacitance at 4V and 1MHz is 15 pF.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | R-1, Axial |
| Mounting Type | Through Hole |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | 15pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | GPR-1A |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 600 V |
Request a Quote
Clients Also Buy
CMMR1U-08 TR PBFREE
DIODE GEN PURP 800V 1A SOD123F
CUD10-04 BK
DIODE GEN PURP 400V 10A DPAK
1N4153 BK
DIODE GEN PURP 75V 150MA DO35
