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TIP112 PBFREE

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TIP112 PBFREE

TRANS NPN DARL 100V TO220-3

Manufacturer: Central Semiconductor Corp

Categories: Single Bipolar Transistors

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Central Semiconductor Corp TIP112-PBFREE is a bipolar junction transistor (BJT) featuring an NPN Darlington configuration. This through-hole component, packaged in a TO-220-3, offers a collector-emitter breakdown voltage of 100V and a transition frequency of 25MHz. Key electrical characteristics include a minimum DC current gain (hFE) of 1000 at 1A collector current and 4V collector-emitter voltage. The saturation voltage (Vce Sat) is a maximum of 2.5V at 8mA base current and 2A collector current, with a collector cutoff current (ICBO) of 1mA. The device operates over a temperature range of -65°C to 150°C. This transistor is commonly employed in power switching and amplification applications across various industrial sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 99 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic2.5V @ 8mA, 2A
Current - Collector Cutoff (Max)1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 1A, 4V
Frequency - Transition25MHz
Supplier Device PackageTO-220-3
Voltage - Collector Emitter Breakdown (Max)100 V

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