TIP112 PBFREE
TRANS NPN DARL 100V TO220-3Manufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
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Central Semiconductor Corp TIP112-PBFREE is a bipolar junction transistor (BJT) featuring an NPN Darlington configuration. This through-hole component, packaged in a TO-220-3, offers a collector-emitter breakdown voltage of 100V and a transition frequency of 25MHz. Key electrical characteristics include a minimum DC current gain (hFE) of 1000 at 1A collector current and 4V collector-emitter voltage. The saturation voltage (Vce Sat) is a maximum of 2.5V at 8mA base current and 2A collector current, with a collector cutoff current (ICBO) of 1mA. The device operates over a temperature range of -65°C to 150°C. This transistor is commonly employed in power switching and amplification applications across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 99 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 8mA, 2A |
| Current - Collector Cutoff (Max) | 1mA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 1A, 4V |
| Frequency - Transition | 25MHz |
| Supplier Device Package | TO-220-3 |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
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