SE9301
TRANS NPN DARL 80V 10A TO220-3Manufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
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Central Semiconductor Corp SE9301 is an NPN Darlington bipolar transistor designed for high-power applications. This component features a collector-emitter breakdown voltage of 80V and a maximum continuous collector current (Ic) of 10A, with a power dissipation rating of 70W. The SE9301 exhibits a minimum DC current gain (hFE) of 100 at 7.5A and 3V. Its collector-emitter saturation voltage (Vce(sat)) is a maximum of 2.5V at 150mA base current and 7.5A collector current, with a collector cutoff current (Icbo) of 200µA. The transistor is housed in a TO-220-3 package, suitable for through-hole mounting. Operating temperature range is from -65°C to 150°C (TJ). This device finds application in power switching and amplification circuits within industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 150mA, 7.5A |
| Current - Collector Cutoff (Max) | 200µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 7.5A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-220-3 |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 70 W |
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