MPS3415 TIN/LEAD
TRANS NPN 25V 0.5A TO92Manufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
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Central Semiconductor Corp MPS3415-TIN-LEAD is an NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This component features a collector-emitter breakdown voltage (Vce) of 25 V and a maximum continuous collector current (Ic) of 500 mA. The MPS3415-TIN-LEAD offers a minimum DC current gain (hFE) of 180 at 2 mA collector current and 4.5 V collector-emitter voltage. With a maximum power dissipation of 625 mW, it is housed in a TO-92 (TO-226-3, TO-92-3) package suitable for through-hole mounting. Operating temperature range is from -65°C to 150°C. The device exhibits a Vce(sat) of 300 mV at 3 mA base current and 50 mA collector current. This transistor is commonly utilized in industrial control, consumer electronics, and telecommunications equipment.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 6 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 3mA, 50mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 2mA, 4.5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 625 mW |
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