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MJ6503 TIN/LEAD

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MJ6503 TIN/LEAD

TRANS PNP 400V 8A TO3

Manufacturer: Central Semiconductor Corp

Categories: Single Bipolar Transistors

Quality Control: Learn More

Central Semiconductor Corp MJ6503-TIN-LEAD is a PNP bipolar junction transistor (BJT) designed for robust power applications. This component, part of the MJ6503 series, features a high collector-emitter breakdown voltage of 400V and a maximum continuous collector current of 8A. With a power dissipation rating of 125W and a saturation voltage of 5V at 3A collector current, it is suitable for demanding switching and amplification tasks. The device exhibits a minimum DC current gain (hFE) of 15 at 2A collector current and 5V collector-emitter voltage. Packaged in a TO-3 (TO-204AA) through-hole metal can, it operates across a wide temperature range of -65°C to 200°C. This transistor finds application in power supply units, motor control, and industrial automation equipment.

Additional Information

Series: MJ6503RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-204AA, TO-3
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic5V @ 3A, 8A
Current - Collector Cutoff (Max)500µA
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 2A, 5V
Frequency - Transition-
Supplier Device PackageTO-3
Current - Collector (Ic) (Max)8 A
Voltage - Collector Emitter Breakdown (Max)400 V
Power - Max125 W

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