CXT5401E TR
TRANS PNP 220V 0.6A SOT89Manufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
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Central Semiconductor Corp CXT5401E-TR is a PNP bipolar junction transistor designed for demanding applications. This component features a 220V collector-emitter breakdown voltage and a maximum continuous collector current of 600mA. Its transition frequency reaches 300MHz, enabling high-speed switching and amplification. The device offers a minimum DC current gain (hFE) of 100 at 10mA collector current and 5V Vce, with a Vce saturation of 150mV at 5mA base current and 50mA collector current. It is packaged in an SOT-89 (TO-243AA) surface-mount configuration, supplied on tape and reel. With a maximum power dissipation of 1.2W and an operating temperature range of -65°C to 150°C, the CXT5401E-TR is suitable for use in industrial control, power management, and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 5V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | SOT-89 |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 220 V |
| Power - Max | 1.2 W |
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