CXT5401E BK
TRANS PNP 220V 0.6A SOT89Manufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
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Central Semiconductor Corp PNP Bipolar Junction Transistor (BJT), part number CXT5401E-BK. This device features a collector-emitter breakdown voltage of 220V and a maximum continuous collector current of 600mA. It offers a minimum DC current gain (hFE) of 100 at 10mA and 5V, with a transition frequency of 300MHz. The transistor is rated for a maximum power dissipation of 1.2W and operates within an extended temperature range of -65°C to 150°C. The CXT5401E-BK is supplied in a SOT-89 (TO-243AA) surface-mount package, suitable for applications in industrial control and consumer electronics. Key parameters include a Vce(sat) of 150mV at 5mA/50mA and a collector cutoff current of 50nA.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 5V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | SOT-89 |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 220 V |
| Power - Max | 1.2 W |
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