CTLT953-M833S TR
TRANS PNP 100V 5A TLM833SManufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
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Central Semiconductor Corp CTLT953-M833S-TR is a PNP bipolar junction transistor (BJT) designed for surface mount applications. This component features a 100V collector-emitter breakdown voltage and a maximum collector current of 5A. With a transition frequency of 150MHz and a power dissipation of 2.5W, it is suitable for demanding applications. Key electrical specifications include a minimum DC current gain (hFE) of 100 at 1A and 1V, and a saturation voltage (Vce(sat)) of 420mV at 400mA and 4A. The device exhibits a low collector cutoff current of 50nA. Operating across a temperature range of -65°C to 150°C, it is supplied in the TLM833S package, presented on tape and reel. This component finds utility in power management and signal amplification circuits across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 420mV @ 400mA, 4A |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1A, 1V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | TLM833S |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 2.5 W |
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