CTLT8099-M322S TR
TRANS NPN 80V 0.5A TLM322Manufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
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Central Semiconductor Corp's CTLT8099-M322S-TR is an NPN bipolar junction transistor designed for demanding applications. This surface-mount component offers an 80V collector-emitter breakdown voltage and a maximum collector current of 500mA. Its high transition frequency of 150MHz, coupled with a maximum power dissipation of 1.45W, makes it suitable for signal amplification and switching in various industrial and consumer electronics sectors. Key specifications include a minimum DC current gain (hFE) of 100 at 1mA/5V and a Vce saturation of 400mV at 5mA/100mA. The TLM322 package, presented in Tape & Reel (TR) format, features an exposed pad for enhanced thermal management. The device operates across a wide temperature range from -65°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-TDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | TLM322 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1.45 W |
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