CP611-2N6107-CT
TRANSISTORManufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
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Central Semiconductor Corp's CP611-2N6107-CT is a high-performance PNP bipolar junction transistor (BJT) designed for demanding applications. This surface-mount component offers a collector-emitter breakdown voltage of 70 V and can handle a continuous collector current of up to 7 A, with a maximum power dissipation of 40 W. Its transition frequency is rated at 4 MHz, making it suitable for various switching and amplification tasks. The transistor exhibits a minimum DC current gain (hFE) of 30 at 2A and 4V, and a saturation voltage (Vce Sat) of 3.5V at 3A and 7A. Operating across a wide temperature range from -65°C to 150°C, this device is supplied as a die in bulk packaging. It finds application in power supply circuits, voltage regulators, and general-purpose amplification within industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3.5V @ 3A, 7A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 2A, 4V |
| Frequency - Transition | 4MHz |
| Supplier Device Package | Die |
| Current - Collector (Ic) (Max) | 7 A |
| Voltage - Collector Emitter Breakdown (Max) | 70 V |
| Power - Max | 40 W |
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