CP588-BCY70-WN
TRANS PNP 45V 0.2A DIEManufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
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Central Semiconductor Corp CP588-BCY70-WN is a PNP bipolar junction transistor supplied as a bare die. This component offers a 45V collector-emitter breakdown voltage and a maximum collector current of 200mA. With a power dissipation of 350mW, it features a minimum DC current gain (hFE) of 60 at 10µA collector current and 1V collector-emitter voltage. Saturation voltage is specified at a maximum of 250mV for 1mA base current and 10mA collector current. This surface mount die is suitable for applications in consumer electronics and industrial control systems requiring discrete transistor functionality.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10µA, 1V |
| Supplier Device Package | Die |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 350 mW |
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