CP588-2N2605-WN
TRANS PNP 45V 0.03A DIEManufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
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Central Semiconductor Corp CP588-2N2605-WN is a PNP bipolar junction transistor (BJT) supplied as a die. This component features a collector-emitter breakdown voltage of 45V and a maximum collector current of 30mA. With a power dissipation rating of 400mW, it offers a minimum DC current gain (hFE) of 100 at 10µA collector current and 5V collector-emitter voltage. The saturation voltage (Vce(sat)) is specified as a maximum of 500mV at 500µA base current and 10mA collector current. This surface mount device is delivered in bulk packaging. Applications for this transistor include general-purpose amplification and switching in industrial and commercial electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10µA, 5V |
| Supplier Device Package | Die |
| Current - Collector (Ic) (Max) | 30 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 400 mW |