CP588-2N2605-CT
TRANS PNP 45V 0.03A DIEManufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
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Central Semiconductor Corp CP588-2N2605-CT is a planar, silicon PNP bipolar junction transistor supplied as a bare die. This component offers a collector-emitter breakdown voltage of 45 V and a continuous collector current capability of 30 mA. With a maximum power dissipation of 400 mW, it features a minimum DC current gain (hFE) of 100 at 10 µA collector current and 5 V collector-emitter voltage. The saturation voltage (Vce Sat) is specified at a maximum of 500 mV for a base current of 500 µA and a collector current of 10 mA. This device is suitable for surface mount applications and is provided in tray packaging. Typical applications include general-purpose amplification and switching circuits in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10µA, 5V |
| Supplier Device Package | Die |
| Current - Collector (Ic) (Max) | 30 mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Power - Max | 400 mW |
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