CP307V-MPSA13-WN
TRANS NPN DARL 30V 0.5A DIEManufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
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Central Semiconductor Corp CP307V-MPSA13-WN is an NPN Darlington bipolar transistor designed for high gain applications. Exhibiting a collector current capability of 500 mA and a collector-emitter breakdown voltage of 30 V, this device features a minimum DC current gain (hFE) of 10000 at 100 mA and 5 V. The transition frequency is 125 MHz, with a maximum power dissipation of 625 mW. This component is supplied as a die for surface mount applications and operates within a temperature range of -65°C to 150°C. The saturation voltage (Vce) is a maximum of 1.5 V at 100 µA base current and 100 mA collector current. The collector cutoff current (ICBO) is a maximum of 100 nA. This transistor is suitable for use in industrial automation, consumer electronics, and power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 100µA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10000 @ 100mA, 5V |
| Frequency - Transition | 125MHz |
| Supplier Device Package | Die |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 625 mW |
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