CP307V-2N5308-WN
TRANS NPN DARL 40V 0.3A DIEManufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
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Central Semiconductor Corp's CP307V-2N5308-WN is an NPN Darlington bipolar transistor supplied as a die. This device features a collector-emitter breakdown voltage of 40V and a maximum continuous collector current of 300mA. With a minimum DC current gain (hFE) of 7000 at 2mA and 5V, it offers significant amplification. The transition frequency is 60MHz. The collector cutoff current (ICBO) is a maximum of 100nA. Saturation voltage (Vce(sat)) is 1.4V maximum at 200µA base current and 200mA collector current. Designed for surface mount applications, it operates within a temperature range of -65°C to 150°C. This component is suitable for use in industrial, medical, and consumer electronics applications requiring high gain and low saturation voltage in a compact, die-level form factor.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.4V @ 200µA, 200mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 7000 @ 2mA, 5V |
| Frequency - Transition | 60MHz |
| Supplier Device Package | Die |
| Current - Collector (Ic) (Max) | 300 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
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