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CP307-MPSA27-CT

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CP307-MPSA27-CT

TRANS NPN DARL 60V 0.5A DIE

Manufacturer: Central Semiconductor Corp

Categories: Single Bipolar Transistors

Quality Control: Learn More

Central Semiconductor Corp CP307-MPSA27-CT is an NPN Darlington bipolar junction transistor (BJT) designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 60V and a maximum continuous collector current of 500mA. Key electrical characteristics include a minimum DC current gain (hFE) of 10000 at 100mA and 5V, and a transition frequency of 125MHz. The device's maximum power dissipation is 625mW, with a saturation voltage (Vce(sat)) of 1.5V at 100µA base current and 100mA collector current. The collector cutoff current is a maximum of 500nA. Operating temperature range is from -65°C to 150°C. This transistor is supplied as a die and is suitable for use in various electronic assemblies and power control circuits.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tray
Technical Details:
PackagingTray
Package / CaseDie
Mounting TypeSurface Mount
Transistor TypeNPN - Darlington
Operating Temperature-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce10000 @ 100mA, 5V
Frequency - Transition125MHz
Supplier Device PackageDie
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max625 mW

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