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CP307-MPSA13-CT

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CP307-MPSA13-CT

TRANS NPN DARL 30V 0.5A DIE

Manufacturer: Central Semiconductor Corp

Categories: Single Bipolar Transistors

Quality Control: Learn More

Central Semiconductor Corp CP307-MPSA13-CT is an NPN Darlington bipolar junction transistor offered as a die for surface-mount applications. This device features a 30V collector-emitter breakdown voltage and a maximum collector current of 500mA. It exhibits a high DC current gain (hFE) of 10000 at 100mA and 5V, with a transition frequency of 125MHz. The maximum power dissipation is rated at 625mW, and it operates within an extended temperature range of -65°C to 150°C. Saturation voltage is a maximum of 1.5V at 100µA base current and 100mA collector current. Applications for this component are found in power switching and amplification circuits across various industries. The component is supplied in a Tray package.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tray
Technical Details:
PackagingTray
Package / CaseDie
Mounting TypeSurface Mount
Transistor TypeNPN - Darlington
Operating Temperature-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce10000 @ 100mA, 5V
Frequency - Transition125MHz
Supplier Device PackageDie
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)30 V
Power - Max625 mW

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