CP307-2N5308-WN
TRANS NPN DARL 40V 0.3A DIEManufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
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Central Semiconductor Corp CP307-2N5308-WN is an NPN Darlington bipolar junction transistor (BJT) designed for high-gain amplification applications. This device offers a collector-emitter breakdown voltage of 40V and a continuous collector current capability of 300mA. With a minimum DC current gain (hFE) of 20000 at 100mA and 5V, it excels in driving loads or amplifying weak signals. The transition frequency is specified at 60MHz, and the maximum power dissipation is 625mW. The collector cutoff current (ICBO) is a maximum of 100nA. Saturation voltage (Vce(sat)) is 1.4V at 200µA base current and 200mA collector current. This component is supplied as a bare die in bulk packaging, suitable for advanced surface-mount assembly processes in industries such as industrial automation, consumer electronics, and telecommunications. It operates across a temperature range of -65°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.4V @ 200µA, 200mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20000 @ 100mA, 5V |
| Frequency - Transition | 60MHz |
| Supplier Device Package | Die |
| Current - Collector (Ic) (Max) | 300 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 625 mW |
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