Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Single Bipolar Transistors

CP307-2N5308-CT

Banner
productimage

CP307-2N5308-CT

TRANS NPN DARL 40V 0.3A DIE

Manufacturer: Central Semiconductor Corp

Categories: Single Bipolar Transistors

Quality Control: Learn More

Central Semiconductor Corp CP307-2N5308-CT is an NPN Darlington bipolar junction transistor designed for surface mount applications. This die-packaged component offers a collector-emitter breakdown voltage of 40V and a continuous collector current capability of 300mA. Achieving a minimum DC current gain (hFE) of 20000 at 100mA and 5V, this transistor features a transition frequency of 60MHz. The maximum power dissipation is rated at 625mW, with a saturation voltage (Vce Sat) of 1.4V at 200µA and 200mA. The device operates within a temperature range of -65°C to 150°C. Commonly utilized in power management and general-purpose amplification circuits, this component is supplied in tray packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tray
Technical Details:
PackagingTray
Package / CaseDie
Mounting TypeSurface Mount
Transistor TypeNPN - Darlington
Operating Temperature-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.4V @ 200µA, 200mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce20000 @ 100mA, 5V
Frequency - Transition60MHz
Supplier Device PackageDie
Current - Collector (Ic) (Max)300 mA
Voltage - Collector Emitter Breakdown (Max)40 V
Power - Max625 mW

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
CJD42C TR13 PBFREE

TRANS PNP 100V 6A DPAK

product image
CMPT6428 TR PBFREE

TRANS NPN 50V 0.2A SOT23

product image
TIP117 TIN/LEAD

TRANS PNP DARL 100V TO220-3