CP245-MJE15030-CM
TRANS NPN 150V 8A DIEManufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
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Central Semiconductor Corp's CP245-MJE15030-CM is a bipolar junction transistor (BJT) designed for high-performance applications. This NPN device offers a collector-emitter breakdown voltage of 150 V and a continuous collector current capability of 8 A. With a transition frequency of 30 MHz, it is suitable for various power switching and amplification circuits. The device features a saturation voltage of 500mV at 100mA collector current and 1A collector current with 100mA base current, and a minimum DC current gain of 40 at 3A collector current and 2V collector-emitter voltage. Operating across a wide temperature range of -65°C to 150°C, this component is supplied as a die, facilitating custom board designs. Its specifications make it a strong candidate for use in industrial automation, power supply units, and audio amplification systems.
Additional Information
Series: CP245RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 3A, 2V |
| Frequency - Transition | 30MHz |
| Supplier Device Package | Die |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |