CP235-2N3055-CT
TRANSISTORManufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
Quality Control: Learn More
Central Semiconductor Corp's NPN Bipolar Junction Transistor (BJT), part number CP235-2N3055-CT, is a high-power surface-mount device. This transistor features a collector current (Ic) capability of 15 A and a maximum power dissipation of 115 W. With a Vce breakdown voltage of 60 V and a transition frequency of 2.5 MHz, it is suitable for applications requiring robust switching and amplification. The device offers a minimum DC current gain (hFE) of 20 at 4A and 4V. Operating temperature range is -65°C to 200°C (TJ). This component is commonly found in power supply circuits, audio amplifiers, and general-purpose switching applications within industrial and consumer electronics. The package type is a Die, supplied in Bulk.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 3.3A, 10A |
| Current - Collector Cutoff (Max) | 700µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 4A, 4V |
| Frequency - Transition | 2.5MHz |
| Supplier Device Package | Die |
| Current - Collector (Ic) (Max) | 15 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 115 W |
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