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Single Bipolar Transistors

CP235-2N3055-CT

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CP235-2N3055-CT

TRANSISTOR

Manufacturer: Central Semiconductor Corp

Categories: Single Bipolar Transistors

Quality Control: Learn More

Central Semiconductor Corp's NPN Bipolar Junction Transistor (BJT), part number CP235-2N3055-CT, is a high-power surface-mount device. This transistor features a collector current (Ic) capability of 15 A and a maximum power dissipation of 115 W. With a Vce breakdown voltage of 60 V and a transition frequency of 2.5 MHz, it is suitable for applications requiring robust switching and amplification. The device offers a minimum DC current gain (hFE) of 20 at 4A and 4V. Operating temperature range is -65°C to 200°C (TJ). This component is commonly found in power supply circuits, audio amplifiers, and general-purpose switching applications within industrial and consumer electronics. The package type is a Die, supplied in Bulk.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseDie
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic3V @ 3.3A, 10A
Current - Collector Cutoff (Max)700µA
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 4A, 4V
Frequency - Transition2.5MHz
Supplier Device PackageDie
Current - Collector (Ic) (Max)15 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max115 W

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