CP225-2N2218A-WN
TRANS NPN 40V 0.8A DIEManufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
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Central Semiconductor Corp NPN Bipolar Junction Transistor (BJT), part number CP225-2N2218A-WN. This die-level component features a 40V collector-emitter breakdown voltage and a maximum collector current of 800mA. It offers a minimum DC current gain (hFE) of 40 at 150mA and 10V, with a transition frequency of 250MHz. The device has a maximum power dissipation of 800mW and a collector cutoff current of 10nA (ICBO). Vce saturation is specified at 1V maximum for 50mA base current and 500mA collector current. Designed for surface mounting, this NPN transistor operates across a temperature range of -65°C to 200°C (TJ). It is supplied in Tape & Box (TB) packaging. This component is suitable for applications in industrial and consumer electronics requiring robust switching and amplification capabilities.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | Die |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 800 mW |
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