CP208-2N3054-WN
TRANS NPN 55V 4A DIEManufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
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Central Semiconductor Corp CP208-2N3054-WN is an NPN bipolar junction transistor (BJT) designed for demanding applications. This die-form component offers a 55V collector-emitter breakdown voltage and a continuous collector current capability of up to 4A. With a maximum power dissipation of 25W and a transition frequency of 3MHz, it is suitable for power switching and amplification circuits. The DC current gain (hFE) is a minimum of 25 at 500mA collector current and 4V Vce. The device operates within a junction temperature range of -65°C to 200°C. Typical industries utilizing this component include industrial controls and power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 6V @ 1A, 3A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 500mA, 4V |
| Frequency - Transition | 3MHz |
| Supplier Device Package | Die |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 55 V |
| Power - Max | 25 W |
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