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CP208-2N3054-WN

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CP208-2N3054-WN

TRANS NPN 55V 4A DIE

Manufacturer: Central Semiconductor Corp

Categories: Single Bipolar Transistors

Quality Control: Learn More

Central Semiconductor Corp CP208-2N3054-WN is an NPN bipolar junction transistor (BJT) designed for demanding applications. This die-form component offers a 55V collector-emitter breakdown voltage and a continuous collector current capability of up to 4A. With a maximum power dissipation of 25W and a transition frequency of 3MHz, it is suitable for power switching and amplification circuits. The DC current gain (hFE) is a minimum of 25 at 500mA collector current and 4V Vce. The device operates within a junction temperature range of -65°C to 200°C. Typical industries utilizing this component include industrial controls and power management systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseDie
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic6V @ 1A, 3A
Current - Collector Cutoff (Max)500µA
DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 500mA, 4V
Frequency - Transition3MHz
Supplier Device PackageDie
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)55 V
Power - Max25 W

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