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CP188-BC546B-WR

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CP188-BC546B-WR

TRANS NPN 65V 0.1A DIE

Manufacturer: Central Semiconductor Corp

Categories: Single Bipolar Transistors

Quality Control: Learn More

Central Semiconductor Corp CP188-BC546B-WR is a bipolar junction transistor (BJT) NPN type, supplied as a die for surface mount applications. This component offers a collector-emitter breakdown voltage of 65V and a continuous collector current capability of 100mA. Maximum power dissipation is rated at 500mW, with a Vce(sat) of 600mV at 5mA base current and 100mA collector current. The device exhibits a minimum DC current gain (hFE) of 200 at 2mA collector current and 5V collector-emitter voltage. Operating temperature range is from -65°C to 150°C. This transistor finds application in general-purpose amplification and switching circuits across various industrial and consumer electronics sectors. Packaged in bulk.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseDie
Mounting TypeSurface Mount
Operating Temperature-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
Current - Collector Cutoff (Max)15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 5V
Supplier Device PackageDie
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)65 V
Power - Max500 mW

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