CP188-BC546B-WR
TRANS NPN 65V 0.1A DIEManufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
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Central Semiconductor Corp CP188-BC546B-WR is a bipolar junction transistor (BJT) NPN type, supplied as a die for surface mount applications. This component offers a collector-emitter breakdown voltage of 65V and a continuous collector current capability of 100mA. Maximum power dissipation is rated at 500mW, with a Vce(sat) of 600mV at 5mA base current and 100mA collector current. The device exhibits a minimum DC current gain (hFE) of 200 at 2mA collector current and 5V collector-emitter voltage. Operating temperature range is from -65°C to 150°C. This transistor finds application in general-purpose amplification and switching circuits across various industrial and consumer electronics sectors. Packaged in bulk.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
| Supplier Device Package | Die |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 65 V |
| Power - Max | 500 mW |
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