CP188-BC546B-CT
TRANS NPN 65V 0.1A DIEManufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
Quality Control: Learn More
Central Semiconductor Corp CP188-BC546B-CT is a bipolar junction transistor (BJT) designed for high-reliability applications. This NPN transistor features a collector-emitter breakdown voltage of 65V and a maximum collector current (Ic) of 100mA. With a power dissipation of 500mW and a low collector cutoff current of 15nA (ICBO), it is suitable for low-power switching and amplification circuits. The DC current gain (hFE) is a minimum of 200 at 2mA collector current and 5V collector-emitter voltage. The device operates across a wide temperature range of -65°C to 150°C. It is supplied as a die for surface mount applications, packaged in trays. This component finds use in industrial, consumer electronics, and telecommunications sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
| Supplier Device Package | Die |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 65 V |
| Power - Max | 500 mW |
Request a Quote
Clients Also Buy
CJD42C TR13 PBFREE
TRANS PNP 100V 6A DPAK
CP307-2N5308-CT
TRANS NPN DARL 40V 0.3A DIE
BC107 PBFREE
TRANS NPN 45V 0.2A TO18
