CP188-BC546B-CM
TRANSISTORManufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
Quality Control: Learn More
Central Semiconductor Corp's CP188-BC546B-CM is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This component features a 65V collector-emitter breakdown voltage and a maximum collector current of 100mA, with a power dissipation rating of 500mW. The transistor exhibits a transition frequency of 300MHz and a typical DC current gain (hFE) of 200 at 2mA collector current and 5V collector-emitter voltage. Saturation voltage is specified at 600mV maximum for a base current of 5mA and collector current of 100mA. The device operates across a temperature range of -65°C to 150°C. Packaged as a die for bulk supply, this component is suitable for various high-frequency and general-purpose amplification and switching applications across industries such as consumer electronics, industrial control, and telecommunications.
Additional Information
Series: CP188RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | Die |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 65 V |
| Power - Max | 500 mW |
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