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CP188-BC546B-CM

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CP188-BC546B-CM

TRANSISTOR

Manufacturer: Central Semiconductor Corp

Categories: Single Bipolar Transistors

Quality Control: Learn More

Central Semiconductor Corp's CP188-BC546B-CM is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This component features a 65V collector-emitter breakdown voltage and a maximum collector current of 100mA, with a power dissipation rating of 500mW. The transistor exhibits a transition frequency of 300MHz and a typical DC current gain (hFE) of 200 at 2mA collector current and 5V collector-emitter voltage. Saturation voltage is specified at 600mV maximum for a base current of 5mA and collector current of 100mA. The device operates across a temperature range of -65°C to 150°C. Packaged as a die for bulk supply, this component is suitable for various high-frequency and general-purpose amplification and switching applications across industries such as consumer electronics, industrial control, and telecommunications.

Additional Information

Series: CP188RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseDie
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
Current - Collector Cutoff (Max)15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 5V
Frequency - Transition300MHz
Supplier Device PackageDie
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)65 V
Power - Max500 mW

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