CP188-BC108-CT
TRANS NPN 25V 0.2A DIEManufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
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Central Semiconductor Corp CP188-BC108-CT is a NPN bipolar junction transistor (BJT) supplied as a die for surface mount applications. This component offers a 25V collector-emitter breakdown voltage and a maximum collector current of 200mA. With a power dissipation of 600mW and a minimum DC current gain (hFE) of 420 at 2mA and 5V, it is suitable for various amplification and switching tasks. The device exhibits a low collector cutoff current of 15nA (ICBO) and a Vce(sat) of 600mV at 100mA collector current and 5mA base current. Operating temperature ranges from -65°C to 200°C (TJ). This transistor is commonly found in consumer electronics and industrial control systems. It is provided in Tray packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 420 @ 2mA, 5V |
| Supplier Device Package | Die |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 600 mW |
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