CP188-2N5088-CT
TRANS NPN 30V 0.05A DIEManufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
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Central Semiconductor Corp's CP188-2N5088-CT is a NPN bipolar junction transistor (BJT) designed for surface mount applications. This die-format component offers a collector-emitter breakdown voltage of 30V and a maximum continuous collector current of 50mA. With a power dissipation rating of 625mW, it is suitable for low-power switching and amplification circuits. The device exhibits a minimum DC current gain (hFE) of 350 at 1mA collector current and 5V collector-emitter voltage, and a Vce(sat) of 500mV at 1mA base current and 10mA collector current. The current cutoff is specified at 50nA (ICBO). Operating temperature range is -65°C to 150°C. This component finds utility in various industrial electronics, consumer electronics, and communication systems.
Additional Information
Series: CP188RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 350 @ 1mA, 5V |
| Supplier Device Package | Die |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 625 mW |
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