CP188-2N2919-CT
TRANS NPN 60V 0.03A DIEManufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
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Central Semiconductor Corp's CP188-2N2919-CT is a NPN bipolar junction transistor (BJT) housed in a die format for surface mount applications. This component from the CP188 series offers a collector-emitter breakdown voltage (Vce(max)) of 60V and a continuous collector current (Ic) capability of 30mA. The device exhibits a minimum DC current gain (hFE) of 150 at 1mA collector current and 5V collector-emitter voltage. Maximum power dissipation is rated at 300mW, with a collector cutoff current (Icbo) of 2nA. Saturation voltage (Vce(sat)) is specified at a maximum of 350mV when operated at 100µA base current and 1mA collector current. Operating temperature range is from -65°C to 150°C. This transistor is commonly utilized in various industrial and commercial electronic systems requiring precise signal amplification and switching.
Additional Information
Series: CP188RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 350mV @ 100µA, 1mA |
| Current - Collector Cutoff (Max) | 2nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 1mA, 5V |
| Supplier Device Package | Die |
| Current - Collector (Ic) (Max) | 30 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 300 mW |
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