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CP147-MJ11016-WN

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CP147-MJ11016-WN

TRANS NPN DARL 120V 30A DIE

Manufacturer: Central Semiconductor Corp

Categories: Single Bipolar Transistors

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Central Semiconductor Corp CP147-MJ11016-WN is a high-performance NPN Darlington bipolar junction transistor designed for demanding applications. This die-form component offers a 120V collector-emitter breakdown voltage and a continuous collector current capability of 30A, with a maximum power dissipation of 200W. Featuring a minimum DC current gain (hFE) of 1000 at 20A and 5V, and a transition frequency of 4MHz, it is suitable for power switching and amplification circuits. The device exhibits a Vce(sat) of 4V at 300mA base current and 30A collector current. Operating across a wide temperature range from -65°C to 200°C, this surface mount transistor is commonly employed in power supply regulation, motor control, and lighting control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseDie
Mounting TypeSurface Mount
Transistor TypeNPN - Darlington
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic4V @ 300mA, 30A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 20A, 5V
Frequency - Transition4MHz
Supplier Device PackageDie
Current - Collector (Ic) (Max)30 A
Voltage - Collector Emitter Breakdown (Max)120 V
Power - Max200 W

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