CP147-MJ11016-WN
TRANS NPN DARL 120V 30A DIEManufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
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Central Semiconductor Corp CP147-MJ11016-WN is a high-performance NPN Darlington bipolar junction transistor designed for demanding applications. This die-form component offers a 120V collector-emitter breakdown voltage and a continuous collector current capability of 30A, with a maximum power dissipation of 200W. Featuring a minimum DC current gain (hFE) of 1000 at 20A and 5V, and a transition frequency of 4MHz, it is suitable for power switching and amplification circuits. The device exhibits a Vce(sat) of 4V at 300mA base current and 30A collector current. Operating across a wide temperature range from -65°C to 200°C, this surface mount transistor is commonly employed in power supply regulation, motor control, and lighting control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 300mA, 30A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 20A, 5V |
| Frequency - Transition | 4MHz |
| Supplier Device Package | Die |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| Power - Max | 200 W |
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