CP147-MJ11016-CT
TRANS NPN DARL 120V 30A DIEManufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
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Central Semiconductor Corp's CP147-MJ11016-CT is a high-power NPN Darlington bipolar transistor designed for demanding applications. This surface mount die offers a collector-emitter breakdown voltage of 120V and a continuous collector current capability of 30A, supported by a maximum power dissipation of 200W. Featuring a transition frequency of 4MHz and a minimum DC current gain (hFE) of 1000 at 20A and 5V, this component is suitable for power switching and amplification circuits. The saturation voltage (Vce Sat) is specified at a maximum of 4V for 300mA base current and 30A collector current. Operating across a wide temperature range of -65°C to 200°C (TJ), this device is commonly utilized in industrial motor control, power supply regulation, and automotive electronics. The component is supplied in a Die package, utilizing Tape & Reel (TR) for efficient handling.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 300mA, 30A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 20A, 5V |
| Frequency - Transition | 4MHz |
| Supplier Device Package | Die |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| Power - Max | 200 W |
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