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CP147-MJ11016-CT

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CP147-MJ11016-CT

TRANS NPN DARL 120V 30A DIE

Manufacturer: Central Semiconductor Corp

Categories: Single Bipolar Transistors

Quality Control: Learn More

Central Semiconductor Corp's CP147-MJ11016-CT is a high-power NPN Darlington bipolar transistor designed for demanding applications. This surface mount die offers a collector-emitter breakdown voltage of 120V and a continuous collector current capability of 30A, supported by a maximum power dissipation of 200W. Featuring a transition frequency of 4MHz and a minimum DC current gain (hFE) of 1000 at 20A and 5V, this component is suitable for power switching and amplification circuits. The saturation voltage (Vce Sat) is specified at a maximum of 4V for 300mA base current and 30A collector current. Operating across a wide temperature range of -65°C to 200°C (TJ), this device is commonly utilized in industrial motor control, power supply regulation, and automotive electronics. The component is supplied in a Die package, utilizing Tape & Reel (TR) for efficient handling.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseDie
Mounting TypeSurface Mount
Transistor TypeNPN - Darlington
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic4V @ 300mA, 30A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 20A, 5V
Frequency - Transition4MHz
Supplier Device PackageDie
Current - Collector (Ic) (Max)30 A
Voltage - Collector Emitter Breakdown (Max)120 V
Power - Max200 W

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