CP147-2N6284-WN
TRANS NPN DARL 100V 20A DIEManufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
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Central Semiconductor Corp CP147-2N6284-WN is an NPN Darlington bipolar junction transistor designed for demanding applications. This die-level component features a 100V collector-emitter breakdown voltage and a maximum collector current of 20A, with a power dissipation capability of 160W. It exhibits a minimum DC current gain (hFE) of 750 at 10A and 3V, and a transition frequency of 4MHz. The saturation voltage (Vce Sat) is specified at a maximum of 3V for 200mA base current and 20A collector current. Operating within a junction temperature range of -65°C to 200°C, this device is suitable for surface mount configurations. Applications may include power switching, motor control, and linear voltage regulation within industrial and high-power electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 200mA, 20A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 10A, 3V |
| Frequency - Transition | 4MHz |
| Supplier Device Package | Die |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 160 W |
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