CP147-2N6284-CM
TRANS NPN DARL 100V 20A DIEManufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
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Central Semiconductor Corp CP147-2N6284-CM is a Bipolar Junction Transistor (BJT) NPN, Darlington configuration. This device offers a collector-emitter breakdown voltage of 100 V and a continuous collector current capability of up to 20 A. Featuring a high DC current gain (hFE) of 750 minimum at 10A and 3V, and a transition frequency of 4 MHz, it is suitable for power switching applications. The maximum power dissipation is 160 W. The transistor type is NPN – Darlington, with a Vce (sat) of 3 V at 200 mA and 20 A. This component is supplied as a bare die, intended for surface mount applications, and packaged in a tray. Operating temperature range is -65°C to 200°C (TJ). This component finds use in power control and switching circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 200mA, 20A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 10A, 3V |
| Frequency - Transition | 4MHz |
| Supplier Device Package | Die |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 160 W |
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