CMPT5551E TR
TRANS NPN 220V 0.6A SOT23Manufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
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Central Semiconductor Corp's CMPT5551E-TR is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of 220V and a continuous collector current capability of 600mA. The device offers a transition frequency of 300MHz and a maximum power dissipation of 350mW. Minimum DC current gain (hFE) is specified at 120 at 10mA collector current and 5V collector-emitter voltage. Saturation voltage (Vce Sat) is a maximum of 100mV at 5mA base current and 50mA collector current. The transistor is provided in a SOT-23 package, supplied on tape and reel. Operating temperature range is -65°C to 150°C. This component finds application in general-purpose amplification and switching circuits across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 10mA, 5V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | SOT-23 |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 220 V |
| Power - Max | 350 mW |
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