CJD45H11 TR13
TRANS PNP 80V 8A DPAKManufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
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Central Semiconductor Corp CJD45H11-TR13 is a PNP bipolar junction transistor (BJT) designed for demanding applications. This component features a maximum collector current (Ic) of 8A and a collector-emitter breakdown voltage (Vce) of 80V. With a minimum DC current gain (hFE) of 40 at 4A and 1V, and a transition frequency of 50MHz, it offers robust performance for power switching and amplification tasks. The device has a maximum power dissipation of 1.75W and a Vce(sat) of 1V at 400mA/8A, ensuring efficient operation. Supplied in a DPAK (TO-252-3) surface mount package and delivered on tape and reel, the CJD45H11-TR13 is suitable for use in industrial motor control, power supplies, and automotive electronics. It operates within a temperature range of -65°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 400mA, 8A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 4A, 1V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | DPAK |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1.75 W |
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