CJD32C TR13
TRANS PNP 100V 3A DPAKManufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
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Central Semiconductor Corp PNP Bipolar Junction Transistor, part CJD32C-TR13. This device features a 100V collector-emitter breakdown voltage and a continuous collector current of 3A. The minimum DC current gain (hFE) is 10 at 3A and 4V. It operates with a maximum power dissipation of 1.56W and has a transition frequency of 3MHz. The transistor is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, supplied in tape and reel. This component is suitable for applications in automotive and industrial power management. The collector cutoff current is a maximum of 50µA, with a Vce saturation of 1.2V at 375mA collector current and 3A collector current. Operating temperature range is -65°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 375mA, 3A |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 3A, 4V |
| Frequency - Transition | 3MHz |
| Supplier Device Package | DPAK |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1.56 W |
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