CJD127 TR13
TRANS PNP DARL 100V 8A DPAKManufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
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Central Semiconductor Corp CJD127-TR13 is a PNP Darlington bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of 100 V and a maximum continuous collector current (Ic) of 8 A. The device offers a minimum DC current gain (hFE) of 1000 at 4 A and 4 V, with a typical transition frequency of 4 MHz. Its Vce saturation is specified at a maximum of 4 V for 80 mA base current and 8 A collector current. The power dissipation is rated at 1.75 W. Packaged in a TO-252-3, DPAK (SC-63) on tape and reel, the CJD127-TR13 is suitable for use in power management and switching applications across various industrial sectors. Operating temperature range is -65°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Darlington |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 80mA, 8A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 4A, 4V |
| Frequency - Transition | 4MHz |
| Supplier Device Package | DPAK |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1.75 W |
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