CJD122 TR13
TRANS NPN DARL 100V 8A DPAKManufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
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Central Semiconductor Corp CJD122-TR13 is a high-performance NPN Darlington bipolar junction transistor. This surface-mount device, packaged in a DPAK (TO-252-3) for efficient thermal management, offers a 100V collector-emitter breakdown voltage and a continuous collector current capability of 8A. It features a substantial minimum DC current gain (hFE) of 1000 at 4A and 4V, coupled with a transition frequency of 4MHz. The CJD122-TR13 is rated for a maximum power dissipation of 1.75W and operates across a wide temperature range of -65°C to 150°C. Applications include power switching and amplification in various industrial and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 80mA, 8A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 4A, 4V |
| Frequency - Transition | 4MHz |
| Supplier Device Package | DPAK |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1.75 W |
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