BSX63-10
BSX63-10Manufacturer: Central Semiconductor Corp
Categories: Single Bipolar Transistors
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Central Semiconductor Corp's BSX63-10 is an NPN bipolar junction transistor (BJT) designed for demanding applications. This through-hole component, housed in a TO-39 metal can package, offers a continuous collector current of 3 A and a collector-emitter breakdown voltage of 60 V. With a maximum power dissipation of 5 W and a transition frequency of 200 MHz, the BSX63-10 is suitable for high-frequency and power switching circuits. The device exhibits a minimum DC current gain (hFE) of 100 at 1 A and 1 V, and a Vce(sat) of 800 mV at 200 mA and 2 A. Its operating temperature range is -65°C to 200°C. This transistor finds utility in industrial, automotive, and telecommunications sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1A, 1V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | TO-39 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 5 W |
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